Method for manufacturing a semiconductor device comprising titanium
AssigneeSharp Kabushiki Kaisha
InventorsKazuyo Nakamura, Keiichiro Uda, Osamu Yamazaki, Hiromi Hattori, Nobutaka Fukushima, Shigeo Onishi
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Abstract
A method for manufacturing a semiconductor device comprising forming a titanium or titanium compound film by a CVD method which uses a material gas containing an organic titanium compound of the formula (I) ##STR1## wherein R is a hydrogen atom, a lower alkyl group, a C.sub.8-13 condensed polycyclic hydrocarbonyl group or a silyl group which is substituted with a lower alkyl and/or an aryl, and a reducing gas.
Claims11
A method of manufacturing a semiconductor device comprising forming a titanium or titanium compound film by a CVD method which uses a gas containing an organic titanium compound of the formula (I) ##STR3## wherein R is a lower alkyl group, a C.sub.8-13 condensed polycyclic hydrocarbonyl group or a silyl group which is substituted with a lower alkyl and/or an aryl, and a reducing gas, and wherein a titanium silicide film is formed by using a gas containing silicon and hydrogen as a reducing gas.
A method of manufacturing a semiconductor device comprising:
- a) forming an interlayer insulating film on a lower conductive layer constituted by a substrate itself or formed on a substrate,
- b) forming a contact hole in the interlayer insulating film,
- c) forming a titanium or titanium compound film by a CVD method to bury the contact hole and cover the remaining interlayer insulating film, the CVD method using a gas containing an organic titanium compound of formula (I) ##STR4## wherein R is a hydrogen atom, a lower alkyl group, a C.sub.8-13 condensed polycyclic hydrocarbonyl group or a silyl group which is substituted with a lower alkyl and/or an aryl, and a reducing gas,
- d) etching the titanium or titanium compound film on the remaining interlayer insulating film to form a contact plug, and
- e) forming an upper conductive layer thereon.
Dependencies are inferred from the claim text.