Aluminum nitride substrate and method for producing same
AssigneeKabushiki Kaisha Toshiba
InventorsHideki Sato, Yasuyuki Sugiura
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Abstract
This invention is directed to a laser-subdivided aluminum nitride substrate wherein a resolidified layer formed at the laser score lines is constituted by one or more types of material selected from the group consisting of oxides, nitrides and oxynitrides of aluminum and of additives of said aluminum nitride substrate, and to a method of producing an aluminum nitride substrate wherein, subsequent to laser scoring the substrate, a heat treatment step at about 1000.degree. C. to 1800.degree. C. is carried out prior to the step of metallizing. This simple method provides an aluminum nitride substrate having a prescribed withstand-voltage characteristic.
Claims10
A semiconductor device, comprising an insulating substrate and a semiconductor circuit mounted on said substrate, wherein said substrate comprises an aluminum nitride substrate obtained by severing an initial aluminum nitride substrate along a high density energy means-generated score line for machining the substrate, having a predetermined depth in at least one portion thereof, said initial substrate comprising a re-solidified layer at the surface of said score line comprised of at least one material selected from the group consisting of an oxide, nitride or oxynitride of aluminum and an oxide, nitride or oxynitride of an additive of the aluminum nitride substrate, wherein said predetermined depth is greater than the thickness of said re-solidified layer.
Dependencies are inferred from the claim text.