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US 5,312,684 AGranted
Threshold switching device
AssigneeDow Corning Corporation
InventorsKeith W. Michael, Udo C. Pernisz
Life of this patent
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Abstract
This invention relates to a method of forming a threshold switching device which exhibits negative differential resistance and to the devices formed thereby. The method comprises depositing a silicon dioxide film derived from hydrogen silsesquioxane resin between at least two electrodes and then applying a voltage above a threshold voltage across the electrodes.
Claims8
A threshold switching device comprising:
- at least 2 leads making contacts at separate points on a material comprising silica with a density between about 0.9 and about 2.1 g/cc derived from hydrogen silsesquioxane, wherein said leads are separated by said material.
Dependencies are inferred from the claim text.