Silicon single crystal manufacturing apparatus

An apparatus for manufacturing large-diameter silicon crystal of greater than 12 cm in diameter comprising:

• a rotary quartz glass crucible containing molten silicon;
• an electric resistance heater for heating said quartz glass crucible from the side thereof;
• a quartz glass partition for dividing said crucible into a single crystal growing section and a material melting section within said quartz glass crucible, said partition member having at least one small hold for permitting unidirectional flow of said molten silicon therethrough;
• a heat keeping cover for covering said partition and said material melting section with said heat keeping cover having one or more openings for establishing a flow direction for atmospheric gas away from said molten silicon with said openings located between said partition member and said electric resistant heater and arranged on an upper flat plate portion and/or an upper side conical portion of said heat keeping cover in such a manner that the total area of said openings is greater than the area formed between the lower end of said heat keeping cover and the surface of said molten silicon;
• a feeder for continuously feeding starting material silicon to said material melting section and
• a means for reducing pressure within the heating chamber to 0.1 atmosphere or less.