Semiconductor flow sensor
AssigneeSchlumberger Industries
InventorsJan Suski, Minh-Trang Chau, Didier Dominguez
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Abstract
The flow rate sensor is made from a silicon substrate (1). A first face (A) of the substrate is provided with a heating element (2) disposed in a first region (R1) and with at least one thermometer component (4) disposed in a second region (R2), the first and second regions being insulated from each other by a third zone (R3) of oxidized porous silicon. According to the invention, the sensor is adapted to receive the flow of fluid (E) over the second face (B) of the substrate (1), with the first and second regions (R1, R2) forming respective thermal short circuits between the first and second faces (A, B) of said substrate.
Claims13
A flow rate sensor comprising a silicon substrate having a first face provided:
- with a heating element disposed in a first cylindrical region of said substrate;
- with at least one thermometer component disposed in a second region of said substrate;
- and
- with a third annular region constituted by at least one insulating channel surrounding said first region, formed of or in part by oxidized porous silicon and isolating said first and second regions from each other;
- said substrate having a second face for receiving a flow of fluid;
- said first and second regions forming respective very low thermal resistances between said first and second faces of said substrate;
- and
- a cap fixed on said first face of said substrate, said cap having at least one cavity formed facing said first region and at least a portion of said third region and said cap being in contact with an interface between said second and said third regions, thereby stiffening said substrate.
Dependencies are inferred from the claim text.