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US 5,311,539 AGranted
Roughened sidewall ridge for high power fundamental mode semiconductor ridge waveguide laser operation
AssigneeInternational Business Machines Corporation
InventorsAbbas Behfar-Rad, Mark E. Jost, Christoph S. Harder
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Abstract
A semiconductor ridge waveguide laser structure with a roughened sidewall ridge that includes a substrate and an active layer disposed between lower and upper cladding layers. The structure further includes a waveguide ridge which comprises a contact layer and a trapezoidal ridge portion 16 of the upper cladding layer. The trapezoidal ridge portion has roughened sidewalls which provides low contact resistance.
Claims6
A semiconductor ridge waveguide structure comprising:
- a semiconductor substrate;
- a first cladding layer disposed on said substrate;
- an active layer disposed on said first cladding layer
- a second cladding layer disposed on said active layer, said second cladding layer including a raised ridge section extending on said second cladding layer, said ridge section having a trapezoidal cross-section with sloping sides 5 micrometers or less distance apart that have a roughened surface to prevent non-fundamental Fabry-Perot modes from occurring;
- and a contact layer disposed on said ridge section.
2 more elements
Dependencies are inferred from the claim text.