Logic circuit and semiconductor device

A semiconductor device comprising:

• a semiconductor substrate having a first conductivity type first semiconductor region for formation of elements and a second conductivity type second semiconductor region for formation of elements;
• a first MOS transistor being formed in said second semiconductor region and having a first conductivity type first current electrode, a first conductivity type second current electrode, and a control electrode;
• a first bipolar transistor being formed in said second semiconductor region and having a second conductivity type first electrode, a second conductivity type second electrode, and a first conductivity type control electrode;
• a second MOS transistor being formed in said first semiconductor region and having a second conductivity type first current electrode, a second conductivity type second current electrode, and a control electrode;
• a second bipolar transistor being formed in said first semiconductor region and having a first conductivity type first electrode, a first conductivity type second electrode, and a second conductivity type control electrode;
• first resistant means;
• second resistant means;
• and
• third resistant means,
• both said first current electrode of said first MOS transistor and said control electrode of said first bipolar transistor being connected to an end of said first resistant means,
• both said first current electrode of said second MOS transistor and said control electrode of said second bipolar transistor being connected to an end of said second resistant means,
• both said second current electrode of said first bipolar transistor and said second current electrode of said second bipolar transistor being connected to an end of said third resistant means, and
• the other ends of said first, second and third resistant means being connected in common.

A semiconductor device comprising:

• a semiconductor substrate having a first conductivity type first semiconductor region for formation of elements and a second conductivity type second semiconductor region for formation of elements;
• a first MOS transistor being formed in said second semiconductor region and having a first conductivity type first current electrode, a first conductivity type second current electrode, and a control electrode;
• a first bipolar transistor being formed in said second semiconductor region and having a second conductivity type first electrode, a second conductivity type second electrode, and a first conductivity type control electrode;
• a second MOS transistor being formed in said first semiconductor region and having a second conductivity type first current electrode, a second conductivity type second current electrode, and a control electrode;
• a second bipolar transistor being formed in said first semiconductor region and having a first conductivity type first electrode, a first conductivity type second electrode, and a second conductivity type control electrode;
• first resistant means;
• second resistant means;
• and
• third resistant means,
• said first resistant means, said control electrode of said first bipolar transistor and said first current electrode of said first MOS transistor being formed by a first conductivity type third semiconductor region being selectivity formed in said second semiconductor region,
• said second resistance means, said control electrode of said second bipolar transistor and said first current electrode of said second MOS transistor being formed by a second conductivity type fourth semiconductor region being selectively formed in said first semiconductor region,
• an end of said third resistant means being connected to said second electrodes of said first and second bipolar transistors in common, and the other end being connected to said third and fourth semiconductor regions in common.