Long wavelength transmitter opto-electronic integrated circuit

A long wavelength transmitter OEIC comprising:

• a semi-insulating InP substrate;
• an AlGaInAs lower cladding layer, a quantum well active layer, a high resistivity AlGaInAs upper cladding layer, an undoped InGaAs operating layer, an n type AlInAs charge carrier supplying layer, and an n type InGaAs contact layer successively disposed on said semi-insulating InP substrate;
• a p type region penetrating through said layers from said contact layer to said quantum well active layer and reaching into said lower cladding layer;
• an n type region spaced a predetermined interval from said p type region, penetrating through said layers from said contact layer to said quantum well active layer, and reaching into said lower cladding layer;
• a p side electrode in communication with said p type region;
• an n side electrode in communication with said n type region;
• a recess groove spaced from said p and n type regions, penetrating through said contact layer, and reaching into said charge carrier supplying layer;
• a gate electrode disposed on said charge carrier supplying layer in said recess groove;
• source and drain electrodes disposed on said contact layer at opposite sides of the recess groove;
• a first separation groove separating said p type region from said n type region, penetrating through said layers from said contact layer to said operating layer, and reaching said high resistivity AlGaInAs upper cladding layer;
• and
• a second separation groove separating said n and p type regions from said source and drain electrodes, penetrating through said layers from said contact layer to said operating layer, and reaching into said high resistivity AlGaInAs upper cladding layer.