Bidirectional semiconductor switch with hybrid construction
AssigneeAsea Brown Boveri AG
InventorThomas Stockmeier
Life of this patent
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Abstract
In a bidirectional semiconductor switch which can be switched on and off, printed conductors which form the main term terminals (1, 2) and the control terminals (3, 4) are applied to a baseplate (9). Applied to the printed conductors, which form the main terminals (1, 2), are at least two reverse-blocking semiconductor components (5a-h) which can be switched on and off. The control electrodes (8a, 8e) and the second main electrodes (7a, 7e) of the semiconductor components (5a-h) are interconnected in such a way that the semiconductor switch has the required bidirectional switching function.
Claims14
A bidirectional semiconductor switch comprising:
- a baseplate;
- a first main terminal formed on the baseplate;
- a second main terminal formed on the baseplate;
- a first control electrode formed on the baseplate;
- a second control electrode formed on the baseplate;
- at least two reverse blocking semiconductors which can be switched on and off and which are formed of a plurality of doped silicon layers;
- wherein a first of the at least two reverse blocking semiconductors is formed on the first main terminal to be electrically connected to the first main terminal, and has a first connection to the second main terminal and a second connection to the first control electrode;
- wherein a second of the at least two reverse blocking semiconductors is formed on the second main terminal to be electrically connected to the second main terminal, and has a third connection to the first main terminal and a fourth connection to the second control electrode.
A bidirectional semiconductor switch comprising:
- a baseplate;
- a first main terminal formed on the baseplate;
- a second main terminal formed on the baseplate;
- a first control electrode formed on the baseplate;
- a second control electrode formed on the baseplate;
- a plurality of reverse blocking semiconductors which can be switched on and off and which are formed of a plurality of doped silicon layers;
- wherein a first group of the plurality of reverse blocking semiconductors are formed on the first main terminal to be electrically connected to the first main terminal, and have a first connection to the second main terminal and a second connection to the first control electrode;
- wherein a second group of the plurality of reverse blocking semiconductors are formed on the second main terminal to be electrically connected to the second main terminal, and have a third connection to the first main terminal and a fourth connection to the second control electrode.
Dependencies are inferred from the claim text.