Photoelectric converter with electron injection preventive layer

Abstract

An improved photoelectric converter with reduced dark current includes a first electrode on a substrate covered by a semiconductor layer for photoelectric conversion. A second electrode is disposed on the semiconductor layer. An electron injection preventive layer is inserted between the semiconductor layer and the second electrode for preventing electrons from being injected from the second electrode into the semiconductor layer. The electron injection preventive layer is formed of a material satisfying the inequality: .phi..sub.M -x.sub.2 .gtoreq.Eg.sub.1 where the work function of the second electrode is .phi..sub.M, the electron affinity of the electron injection preventive layer is x.sub.2, and the band gap energy of the semiconductor layer is Eg.sub.1.

Dependencies are inferred from the claim text.