Superconducting device
AssigneeHitachi, Ltd.
InventorsToshikazu Nishino, Mutsuko Miyake, Ushio Kawabe, Yutaka Harada, Masaaki Aoki, Mikio Hirano
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AssigneeHitachi, Ltd.
InventorsToshikazu Nishino, Mutsuko Miyake, Ushio Kawabe, Yutaka Harada, Masaaki Aoki, Mikio Hirano
Estimating the term…
A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic. And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.
A superconducting device comprising a pair of superconducting electrodes, having a thickness, so formed as to have a projection of semiconductor material, formed on a semiconductor substrate, interposed therebetween, the projection having lateral surfaces extending from the semiconductor substrate, and a height in a direction of the thickness of the superconducting electrodes, and a control electrode means for controlling current flowing between the superconducting electrodes, which control electrode means is formed so as to cover at least a part of an upper surface of said projection of semiconductor material, and is separated from said projection by an electric insulator film said control electrode means serving to control a superconducting weak coupling state between said superconducting electrodes, and wherein the lateral surfaces have lateral surface regions extending from the lateral surfaces into the projection, the lateral surface regions having an impurity concentration higher than that of the substrate, the lateral surface regions, having the relatively high impurity concentration, extending the height of the projection from the substrate to a top of the projection, wherein said lateral surface regions having a relatively high impurity concentration region include a first high impurity concentration sub-region, the first high impurity concentration sub-region contacting one of the pair of superconducting electrodes, and the second high impurity concentration sub-region contacting the other of the pair of superconducting electrodes.
Dependencies are inferred from the claim text.