Charged particle beam lithography system and method therefor

In a method of manufacturing integrated circuitry, a charged particle beam lithography method comprising the steps of:

• mounting a wafer, having an orientation flat, onto a stage having X and Y axes;
• determining the orientation of the wafer on the stage by detecting a rotation angle of one of the orientation flat of the wafer and marks provided on the wafer;
• projecting a charged particle beam from a charged particle source, through a shaping lens, a shaping aperture, a rotating lens, a demagnifying lens and an objective lens, to the wafer;
• rotating the charged particle beam by an amount substantially equal to the detected rotation angle by using a solenoid coil as the rotating lens in a manner so as to avoid substantial demagnification and beam blurring;
• and
• thereafter drawing a predetermined pattern on the wafer by controlling a beam deflector.

In a method of manufacturing integrated circuitry, a charged particle beam lithography method comprising the steps of:

• mounting a wafer, having two marks formed thereon, onto a stage having X and Y axes;
• determining the orientation of the wafer on the stage by detecting the position of the two marks, by using two optical microscopic systems with known relative positions, and calculating a rotation angle based on the location of the two marks with respect to the X and Y axes of the stage;
• projecting a charged particle beam from a charged particle source, through a shaping lens, a shaping aperture, a rotating lens, a demagnifying lens and an objective lens, to the wafer;
• rotating the charged particle beam by an amount substantially equal to the detected rotation angle by using a solenoid coil as the rotating lens in a manner so as to avoid substantial demagnification and beam blurring;
• and
• thereafter drawing a predetermined pattern on the wafer by controlling a beam deflector.