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US 5,310,720 AGranted
Process for fabricating an integrated circuit device by forming a planarized polysilazane layer and oxidizing to form oxide layer
AssigneesFujitsu Limited, Kyushu Fujitsu Electronics Limited
InventorsDaitei Shin, Hideki Harada
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Abstract
A thick planarization layer of silicon dioxide that is heat resistant is provided by coating a polysilazane layer over a substrate having steps and firing the polysilazane layer in an oxygen-containing atmosphere to convert the polysilazane to silicon dioxide. The temperature of this conversion may be as low as 400.degree. to 450.degree. C. while a higher firing or curing temperature is preferable to obtain a more densified oxide layer.
Claims10
A process for fabricating an integrated circuit device, which comprises:
- preparing an integrated circuit device comprising a substrate having a stepped portion on an upper surface thereof;
- coating a polysilazane on the upper surface of said substrate to form a polysilazane layer having a planar top surface;
- and
- firing the polysilazane layer in an oxygen-containing atmosphere to convert the polysilazane layer to a silicone dioxide layer, wherein the silicon dioxide layer has a planar top surface and covers the upper surface of the substrate including the stepped portion thereon.
1 more element
Dependencies are inferred from the claim text.