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US 5,310,696 AGranted
Chemical method for the modification of a substrate surface to accomplish heteroepitaxial crystal growth
AssigneeMassachusetts Institute of Technology
InventorsPatrick J. McCann, Glifton G. Fonstad
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Abstract
A chemical method for the modification of a substrate surface by compound formation to accomplish heteroepitaxial crystal growth is provided. This method enables the growth of semiconductors on insulators allowing fabrication of three dimensionally integrated devices. Devices include vertical FET's for DRAM storage cells, integrated diode laser/FET's, integrated detector/FET's, and common gate CMOS inverters.
Claims21
A liquid phase epitaxy method for heteroepitaxial crystal growth comprising:
- exposing an insulating substrate characterized by a substrate chemical composition and selected from the group consisting of barium fluoride, strontium fluoride, calcium fluoride and alloys thereof to a reactive substance characterized by a reactive substance chemical composition which reacts chemically with said substrate and wherein said reactive substance includes a Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium under conditions sufficient to react with said substrate to form a compound layer on said substrate wherein said compound layer is further characterized by a compound layer chemical composition different from said substrate chemical composition and different from said reactive substance chemical composition followed by growing a heteroepitaxial crystalline layer which is a compound semiconductor including a first element selected from the group consisting of carbon, silicon, germanium, tin and lead and a second element selected from the group consisting of oxygen, sulphur, selenium and tellurium on said compound layer by liquid phase epitaxy.
A method for heteroepitaxial crystal growth comprising:
- (1) pre-treating a polished (100) oriented barium fluoride substrate characterized by a damaged surface layer by etching said (100) oriented barium fluoride substrate in stirred water for ninety minutes at 25.degree. C.;
- (2) exposing and polished (100) oriented barium fluoride substrate characterized by a (100) oriented barium fluoride substrate composition to a reactive substance characterized by a reactive substance composition to react with said polished (100) oriented barium fluoride substrate to form a compound layer on said (100) oriented barium fluoride substrate wherein said compound layer is characterized by a compound layer composition which differs from said reactive substance composition and said polished (100) oriented barium fluoride substrate composition and said compound layer composition includes a constituent of said polished (100) oriented barium fluoride substrate;
- and
- (3) growing a heteroepitaxial crystalline layer on said compound layer.
1 more element
A method for heteroepitaxial crystal growth of a semiconductor on insulator structure comprising:
- (1) providing an insulator substrate characterized by a substrate composition;
- (2) providing a molten growth solution of a semiconductor characterized by a liquidus temperature and a growth solution composition and having a volatile component;
- (3) heating said molten growth solution to a temperature above said liquidus temperature;
- (4) exposing said insulator substrate to said volatile component so that a reaction occurs between said insulator substrate and said volatile component to form a reaction compound layer having a reaction compound layer composition different from said substrate composition and said growth solution composition on said insulator substrate;
- (5) cooling said molten growth solution below said liquidus temperature to form a cooled molten growth solution;
- and
- (6) exposing said insulator substrate to said cooled molten growth solution so that an epitaxial semiconductor layer is formed on said reaction compound layer.
4 more elements
Dependencies are inferred from the claim text.