Method of forming a SIMOX structure

A method of forming a SIMOX structure, comprising the steps of:

• providing a semiconductor substrate;
• implanting oxygen into the substrate;
• annealing the substrate in a first ambient comprised of argon and oxygen, thus forming a buried oxide layer and a superficial layer having a surface;
• and
• annealing the substrate in a second ambient comprised of hydrogen and a silicon compound, wherein a quasi-equilibrium is established at the surface of the superficial layer, wherein etching of the superficial layer is prevented and deposition of silicon is negligible.

A method of reducing defects in a SIMOX structure, comprising the steps of:

• providing the SIMOX structure;
• annealing the SIMOX structure in a first ambient comprised of argon and oxygen;
• and
• annealing the SIMOX structure in a second ambient comprised of hydrogen and a silicon compound, wherein a quasi-equilibrium is established, wherein etching of the SIMOX structure is prevented and deposition of silicon is negligible.

A method of forming a SIMOX structure, comprising the steps of:

• providing a silicon substrate;
• forming a buried oxide layer in the substrate by ion implantation of oxygen, thus forming the SIMOX structure;
• annealing the SIMOX structure such that the buried oxide layer is densified;
• and
• annealing the SIMOX structure in an ambient comprised of hydrogen and a silicon compound, wherein a quasi-equilibrium is established, wherein deposition of silicon is negligible.

A method of reducing defects in a SIMOX structure, comprising the steps of:

• providing a SIMOX structure;
• annealing the SIMOX structure in a first ambient comprised of hydrogen at a low temperature of approximately 700-900.degree. C.;
• and
• annealing the SIMOX structure in a second ambient comprised of argon and oxygen at a temperature of approximately 100.degree. to 1300.degree. C.