Method for forming a patterned layer using dielectric materials as a light-sensitive material

A method for forming a patterned layer over a substrate, the method comprising the steps of:

• forming a nitride layer over the substrate;
• placing a mask adjacent the nitride layer;
• selectively exposing the nitride layer through the mask to form both first regions of the nitride layer and second regions of the nitride layer wherein atoms which comprise the first regions of the nitride layer have a first atomic bonding energy and atoms which comprise the second regions of the nitride layer have a second atomic bonding energy, the first atomic bonding energy and the second atomic bonding energy being unequal;
• and
• removing the first regions of the nitride layer to form said patterned layer from said nitride layer.

A method for forming a patterned layer comprising the steps of:

• providing a substrate;
• forming a layer which is sensitive to ultra-violet (UV) light having an atomic bond energy, the layer which is sensitive to UV light overlying the substrate and being further characterized as an insulating material;
• placing a mask adjacent the layer which is sensitive to ultra-violet (UV) light;
• selectively exposing the layer which is sensitive to UV light to UV light having a wavelength less than 405 nanometers wherein unexposed portions of the layer which is sensitive to UV light are formed and exposed portions of the layer which is sensitive to UV light are formed, the exposed portions having altered atomic bond energies;
• and
• removing the unexposed portions of the layer which is sensitive to UV light to form said patterned layer.

A method for forming a patterned layer comprising the steps of:

• providing a substrate;
• forming a topographical surface overlying the substrate, said topographical surface having high surfaces and low surfaces wherein said high surfaces and said low surfaces are separated by sidewalls, said sidewalls and said low surfaces forming recessed surface regions of the topographical surface;
• forming a conformal layer of material overlying the topographical surface, said conformal layer of material forming recessed surface regions of the conformal layer of material which overlie said recessed surface regions of the topographical surface, said conformal layer of material being atomically sensitive to an energy source;
• filling the recessed surface regions of the conformal layer of material with a plug material which is substantially insensitive to said energy source;
• exposing portions of the conformal layer of material to energy from said energy source wherein exposed portions of the conformal layer of material are formed adjacent the plug material and unexposed portions of the conformal layer of material are formed underlying the plug material;
• removing the plug material;
• and
• removing said unexposed portions of the conformal layer of material to form said patterned layer.

A method for forming an opening in a layer of material comprising the steps of:

• providing a substrate;
• forming a topographical surface overlying the substrate, said topographical surface forming a recessed region;
• forming a conformal dielectric layer as the layer of material overlying the topographical surface;
• forming a plug region overlying the conformal dielectric layer and at least partially within said recessed region;
• exposing the conformal dielectric layer to energy source radiation using the plug region as a masking layer to form first portions of the conformal dielectric layer and second portions of the conformal dielectric layer wherein the first portions are exposed to a intensity of energy unequal to the intensity of energy exposed to the second portions;
• and
• removing the first portions of the conformal dielectric layer to form said opening in the conformal dielectric layer.

A method of forming an integrated circuit having a patterned layer overlying a substrate, the integrated circuit having at least one sub-micron feature, the method comprising the steps of:

• forming an inorganic layer of material overlying said substrate;
• selectively exposing said inorganic layer of material to an energy source to form exposed and unexposed portions of the inorganic layer of material;
• and
• exposing a portion of said inorganic layer of material to an etchant wherein the unexposed portions are removed at a first etch rate which is different from a second etch rate of the exposed portions.