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US 5,310,610 AGranted
Silicon micro sensor and manufacturing method therefor
AssigneeSharp Kabushiki Kaisha
InventorsHisatoshi Furubayashi, Yasuhiko Inami
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Abstract
A silicon micro sensor including a silicon substrate, a support element formed over an etched portion of the silicon substrate and a sensor element formed on the support element wherein the support element has a double layered structure including a silicon oxide film formed on the silicon substrate using the thermal oxidization method and an aluminum oxide film formed on the silicon oxide film using the sputtering method.
Claims8
A silicon micro sensor comprising:
- a silicon substrate;
- a support film overlaying said substrate, said support film including a lower layer of silicon oxide film applied by a thermal oxidization method and an upper layer of aluminum oxide film applied by a sputtering method wherein the thickness of the aluminum oxide film is thicker than that of the silicon oxide film,
- said layers of said support film being heated at a predetermined temperature for a predetermined time thereby providing a flat stable configuration;
- a support element formed from a portion of said support film at an etched portion of said substrate;
- and
- a sensor element and electrode members applied to said support element.
3 more elements
Dependencies are inferred from the claim text.