Semiconductor device and a method for producing the same

A semiconductor device, comprising:

• a multiple layer structure including an active layer which is substantially flat, a first semiconductor layer and a second semiconductor layer adjacent to each other, the semiconductor layers having a corrugation at an interface therebetween;
• and
• generating means which is connected to the multiple layer structure,
• wherein an optical field intensity distribution is generated by use of the generating means in a waveguide region including the active layer,
• wherein the corrugation is periodical and formed outside an area which has the optical field intensity distribution, and
• wherein the active layer includes a gain distribution having a distribution pattern corresponding to the corrugation.

A semiconductor device, comprising:

• a multiple layer structure including an active layer which is substantially flat, a first semiconductor layer and a second semiconductor layer adjacent to each other, the semiconductor layers having a corrugation at an interface therebetween;
• and
• generating means which is connected to the multiple layer structure,
• wherein the active layer is sufficiently thin to generate quantum effects,
• wherein an electronic field intensity distribution is generated by use of the generating means in a waveguide region including the active layer,
• wherein the corrugation is formed outside an area which has the electronic field intensity distribution, and
• wherein the active layer includes a gain distribution having a distribution pattern corresponding to the corrugation.

A method for producing a semiconductor device comprising a multiple layer structure including an active layer which is substantially flat, and a first semiconductor layer and a second semiconductor layer adjacent to each other, the semiconductor layers having a corrugation at an interface therebetween;

• and generating means;
• the method comprising the steps of:
• preparing the multiple layer structure by forming the corrugation on an upper surface of the first semiconductor layer, and forming the rest of the multiple layer structure including the second semiconductor layer and the active layer by using a vapor phase growth method once so as to make the active layer substantially flat and to place the active layer at a distance from the corrugation;
• and
• forming the generating means to be in contact with the multiple layer structure;
• wherein the distance is set so that the corrugation is outside an area of an electromagnetic field intensity distribution which is generated by use of the generating means in a waveguide region including the active layer, and that the active layer includes a gain distribution having a distribution pattern corresponding to the corrugation.