US 5,309,469 A · Monitoring optical gain of semiconductor optical amplifier

Abstract

In this invention, a semiconductor device designed for use as an optical amplifier is provided with three sections; an input section, a middle section and an output section. A continuous optical waveguide extends through the input section, the middle section and the output section and the three sections are electrically isolated from each other. More specifically, a semiconductor laser amplifier is electrically split into three separate sections by implanting ions of, for example, hydrogen, helium or fluorine into the areas of the semiconductor amplifier which are between the middle section and the two end sections. The ion implantation provides a high degree of electrical isolation between the various sections, but it does not alter the continuity of the optical waveguide which passes through the three sections. In operation, each section is coupled to a bias source to forward bias the device, and the ratio of the voltages on the two end sections induced by the optical signal is proportional to the gain of the semiconductor amplifier.

Claims10

Dependent claims

A semiconductor optical amplifier

comprising
an input section, an output section and a middle section located between said input and output sections and including a gain medium and a continuous optical waveguide which extend through said input, middle and output sections,
means to electrically isolate said input, middle and output sections from each other,
means coupled to bias each of said three sections, and
means coupled to detect the change of voltage at the input section and output section a first electrical contact coupled to the input section for applying a forward bias to the input section,
a second electrical contact coupled to the middle section for applying a forward bias to the middle section, and
a third electrical contact coupled to the output section for applying a forward bias to the output section,
each electrical contact covers substantially all of the top surface of its associated section and each electrical contact is electrically isolated from each other,
wherein said means to electrically isolate said input, output and middle sections from each other comprises ions implanted into the semiconductor device in the area intermediate the input and middle sections and the middle and output sections.

6 more elements

Dependencies are inferred from the claim text.

Monitoring optical gain of semiconductor optical amplifier

Life of this patent

Monitoring optical gain of semiconductor optical amplifier

Life of this patent

Abstract

Claims10