US 5,309,467 A · Semiconductor laser with InGaAs or InGaAsP active layer

Abstract

A semiconductor laser having a buried stripe structure is provided, which comprises a first cladding layer of InP, an active layer containing at least an InGaAsP or InGaAs layer, a barrier layer of In.sub.1-x Al.sub.x As (x=0.48 to 1.00), a second cladding layer of InP, a mesa-shaped stripe portion composed of the first cladding layer, active layer, barrier layer and second cladding layer, and a pair of buried layers disposed on both sides of the stripe portion so as to bury the same therebetween formed in this order on an InP substrate. The hetero barrier of conduction band between the active and barrier layers is increased by the barrier layer when an electric current is injected, thus being capable of restricting the electrons injected into the active layer to be leaked to the second cladding layer. It is preferable that a second barrier layer of In.sub.1-x Al.sub.x As (x=0.48 to 1.00) is disposed on each side of the stripe portion.

Claims12

Dependent claims

A semiconductor laser comprising:

a semiconductor substrate of InP:
a first cladding layer of InP formed on said substrate:
an active layer formed on said first cladding layer, said first cladding layer including at least one of an InGaAsP layer and an InGaAs layer:
a barrier layer of In.sub.1-x Al.sub.x As (0.48<x.ltoreq.1.00) formed on said active layer;
and
a second cladding layer of InP formed on said barrier layer.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor laser with InGaAs or InGaAsP active layer

Life of this patent

Semiconductor laser with InGaAs or InGaAsP active layer

Life of this patent

Abstract

Claims12