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US 5,309,466 AGranted
Semiconductor laser
AssigneeNEC Corporation
InventorsYoshiyasu Ueno, Hiroaki Fujii, Akiko Gomyo
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AssigneeNEC Corporation
InventorsYoshiyasu Ueno, Hiroaki Fujii, Akiko Gomyo
Estimating the term…
In a semiconductor laser, an active layer includes a semiconductor layer having the ordered structure along the [-1,1,1] direction or along the [1,-1,1] direction. By the action of the ordered structure, the electric vector of the recombination light generated in the active layer is concentrated in the (-1,1,1) plane or the (1,-1,1) plane. Alternatively, the semiconductor layer has not only the ordered structure along the [-1,1,1] direction or along the [1,-1,1] direction, but also the compressive strain in the (0,0,1) plane. By the action of the ordered structure and the compressive strain, the recombination light generated in the active layer is emitted in the (1,1,0) plane. As a result, the recombination light effectively gives a gain to the oscillation mode. Thus, the oscillation threshold current of the semiconductor laser is reduced, and the laser characteristics is improved.
In a semiconductor laser including a semiconductor substrate having a surface of a (0,0,1) plane, a first clad layer formed on said surface, an active layer formed on said first clad layer, said active layer including at least a compound semiconductor layer having an ordered structure along a [-1,1,1] direction, a second clad layer formed on said active layer, and a laser resonator.
In a semiconductor laser including a semiconductor substrate having a surface of a (0,0,1) plane, a first clad layer formed on said surface, an active layer formed on said first clad layer, said active layer including at least a compound semiconductor layer having an order structure along a [1,-1,1] direction, a second clad layer formed on said active layer, and a laser resonator.
In a semiconductor laser including a semiconductor substrate having a surface of a plane inclined from a (0,0,1) plane, a first clad layer formed on said surface, an active layer formed on said first clad layer, said active layer including at least a compound semiconductor layer having an ordered structure along a [1,-1,1] direction, a second clad layer formed on said active layer, and a laser resonator.
In a semiconductor laser including a semiconductor substrate having a surface of a plane inclined from a (0,0,1) plane, a first clad layer formed on said surface, an active layer formed on said first clad layer, said active layer including at least a compound semiconductor layer having an ordered structure along a [-1,1,1] direction, a second clad layer formed on said active, and a laser resonator.
Dependencies are inferred from the claim text.