Junction field effect transistor with lateral gate voltage swing (GVS-JFET)

A Field Effect Transistor comprising:

• a gate layer of one conductivity type;
• a conducting channel layer of a conductivity type opposite the conductivity type of said gate layer, wherein said gate layer and said channel layer have a common face;
• a source and a drain on a face of said conducting channel layer opposite said common face;
• and
• a leveling means to make the electric field within said conducting channel layer more uniform between said source and said drain so as to increase the electric field strength near said source and thus accelerate electrons near said source more rapidly to increase transconductance and reduce the average electron transit time;
• wherein said gate layer is in epitaxial contact with said conducting channel layer;
• and
• wherein said leveling means is a single surface gate asymmetrically interposed between said source and said drain along said face of said conducting channel layer opposite said common face such that said single surface gate is closer to either said drain or said source.