Diamond films with heat-resisting ohmic electrodes
AssigneeKabushiki Kaisha Kobe Seiko Sho
InventorsKimitsugu Saito, Koji Kobashi, Kozo Nishimura, Koichi Miyata
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Abstract
A is a heat-resisting ohmic electrode on diamond film, including: a p-type semiconducting diamond film; a boron-doped diamond layer provided on the semiconducting diamond film; and an electrode element made of p-type Si selectively formed on the boron-doped diamond layer; wherein the boron concentration in the boron-doped diamond layer is from 1.0.times.10.sup.19 to 1.8.times.10.sup.23 cm.sup.-3, and at least one impurity selected from the group consisting of B, Al and Ga is doped in the electrode element with a concentration from 1.0.times.10.sup.20 to 5.0.times.10.sup.22 cm.sup.-3. The ohmic electrode on diamond film is applicable for electronic devices operative at high temperature.
Claims3
A heat-resisting ohmic electrode on diamond film, comprising:
- a p-type semiconducting diamond film;
- a boron-doped diamond layer provided on said semiconducting diamond film;
- and
- an electrode element made of a p-type Si selectively formed on said boron-doped layer;
- wherein boron is doped in said boron-doped diamond layer with a concentration from 1.0.times.10.sup.19 to 1.8.times.10.sup.23 cm.sup.-3, and at least one impurity selected from the group consisting of B, Al and Ga is doped in said electrode element with a concentration from 1.0.times.10.sup.20 5.0.times.10.sup.22 cm.sup.-3.
Dependencies are inferred from the claim text.