Moving disks made of semiconductor nanocrystallite embedded glass
OwnerHuai-Chuan Leeinventor
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Abstract
This invention modifies the microstructure of semiconductor nanocrystallite embedded glass by following a prescribed process schedule, so that it can be a solid state laser active medium. The crystalline phase of the glass consists of uniformly dispersed nanometer size single crystals which belong to one of the following semiconductor compounds: ZnS.sub.x Se.sub.1-x, CdS.sub.x Se.sub.1-x, ZnS.sub.x Te.sub.1-x, ZnSe.sub.x Te.sub.1-x, CuCl.sub.x Br.sub.1-x, InP, Al.sub.x Ga.sub.1-x As, GaInAsP, AlGaAsSb, InAsSbP, and AlGaInP, where x=0 to 1. Some of the semiconductor nanocrystallite embedded glass has a tunable range which overlaps that of the visible dye lasers, therefore it can be used as a replacement for the existing liquid dyes as the active media utilized in the tunable dye laser systems.
Claims6
A glass-ceramic article containing an embedded semiconductor nanocrystallite as the predominant crystal phase which can be prepared from a precursor glass capable of being melted at a temperature no higher than 1600.degree. C., and which can be precipitated during cooling;
- said glass-ceramic article consisting essentially, expressed in terms of weight percent on the oxide basis, of 40-75% SiO.sub.2, 0 to 50% B.sub.2 O.sub.3, 0-15% Li.sub.2 O, 0-15% Na.sub.2 O and/or K.sub.2 O, 0-20% ZnO, and 0.0001-5.0% of said semiconductor nanocrystallite;
- and wherein the semiconductor nanocrystallite is selected from the group consisting of:
- ZnS.sub.x Se.sub.1-x, CdS.sub.x Se.sub.1-x, CuCl.sub.x Br.sub.1-x, ZnS.sub.x Te.sub.1-x, ZnSe.sub.x Te.sub.1-x, InP, Al.sub.x Ga.sub.1-x As, GaInAsP, AlGaAsSb, InAsSbP, and AlGaInP, where x=0 to 1.
A glass-ceramic article containing an embedded semiconductor nanocrystallite as the predominant crystal phase which can be prepared from a precursor glass capable of being melted at a temperature no higher than 1600.degree. C. and which can be crystallized in a uniform crystal orientation by applying an external electrical field during cooling;
- said glass-ceramic article consisting essentially, expressed in terms of weight percent on the oxide basis, of 40-75% SiO.sub.2, 0 to 50% B.sub.2 O.sub.3, 0-15% Li.sub.2 O, 0-15% Na.sub.2 O and/or K.sub.2 O, 0-20% ZnO, and 0.0001-5.0% of said semiconductor nanocrystallite;
- and wherein then semiconductor nanocrystallite is selected from the group consisting of:
- ZnS.sub.x Se.sub.1-x, CdS.sub.x Se.sub.1-x, CuCl.sub.x Br.sub.1-x, ZnS.sub.x Te.sub.1-x, ZnSe.sub.x Te.sub.1-x, InP, Al.sub.x Ga.sub.1-x As, GaInAsP, AlGaAsSb, InAsSbP, and AlGaInP, where x =0 to 1.
Dependencies are inferred from the claim text.