Process for producing a ferroelectric film device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKenji Iijima, Ryoichi Takayama, Yoshihiro Tomita, Ichiro Ueda
Life of this patent
Estimating the term…
Loading patent…
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKenji Iijima, Ryoichi Takayama, Yoshihiro Tomita, Ichiro Ueda
Estimating the term…
For applying ferroelectrics to electronic devices, the poling treatment of the ferroelectrics has been necessary in order to uniform directions of spontaneous polarizations, Ps, in each ferroelectric. This treatment brings about (1) low yields of the devices, (2) difficulties in the fabrication of array devices, and (3) difficulties in the formation of ferroelectric films on semiconductor devices. Now it has been found that a self-polarized film in which spontaneous polarizations, Ps, are unidirectional can be formed by sputtering a ferroelectric materials containing lead under such conditions that the orientation of Ps will be controlled without poling treatment and a high-performance ferroelectric device can be obtained in a high yield by using this film, and thus a process for producing such devices has been found.
A process for producing a ferroelectric film device provided with a ferroelectric thin film in which spontaneous polarizations in said film are oriented in the same direction without any poling treatment being applied to said film, said film having a composition which is represented by the chemical formula (PbxLay)(TizZrw)O.sub.3 and lies in a range selected from
Dependencies are inferred from the claim text.