US 5,308,445 A · Method of manufacturing a semiconductor device having a semiconductor growth layer completely insulated from a substrate

Abstract

A silicon oxide layer is formed on a silicon substrate, and an opening whose wall is sloped inward is formed in the silicon oxide layer. A seed crystalline silicon layer is formed from the opening. The seed crystalline layer is selectively oxidized while leaving the seed crystalline layer required for crystal growth. An oxide formed at this time closes the opening. Consequently, the seed crystalline layer is insulated from the silicon substrate. The seed crystalline layer is epitaxially grown, to obtain a silicon growth layer on a field oxide layer. The growth layer is insulated from the silicon substrate, and is uniform in surface direction. Accordingly, there is no parasitic capacitance due to a p-n junction between the silicon substrate and the growth layer, thereby to make it possible to perform a high-speed operation. In addition, the growth layer is uniform in surface direction, thereby to make it easy to control the conditions set so as to obtain desired device characteristics in the manufacturing processes.

Claims32

Dependent claims

A method of manufacturing a semiconductor device, comprising the steps of:

(a) forming an insulation layer on a semiconductor substrate;
(b) forming an opening for seed crystal growth in said insulation layer;
(c) forming a seed crystalline layer in the opening, starting from the surface of the semiconductor substrate exposed by the opening, growing the seed crystalline layer until it is projected from the opening, and further growing the seed crystalline layer so as to extend in the lateral direction over a portion of the insulation layer in a vicinity of the opening without covering the insulation layer outside of the vicinity of the opening, by lateral growth;
(d) selectively oxidizing a portion of the seed crystalline layer, the selectively oxidized portion including at least a part of the seed crystalline layer above the opening so that a remaining portion of the seed crystalline layer required for crystal growth is left around the opening, and closing the opening by an oxide formed, to interrupt the connection between the seed crystalline layer which is left around the opening and the semiconductor substrate;
and
(e) epitaxially growing the seed crystalline layer which is left around the opening after said step (d) to form a semiconductor growth layer covering the insulation layer outside the vicinity of the opening.

3 more elements

A method of manufacturing a semiconductor device, comprising the steps of:

(a) forming an insulation layer on a semiconductor substrate;
(b) forming an opening for seed crystal growth in the insulation layer;
(c) forming a seed crystalline layer in the opening, starting from the surface of the semiconductor substrate exposed by the opening, growing the seed crystalline layer until it is projected from the opening, and further growing the seed crystalline layer so as to extend in the lateral direction over a portion of the insulation layer in a vicinity of the opening without covering a portion of the insulation layer outside of the vicinity of the opening, by lateral growth;
(d) selectively removing a portion of the seed crystalline layer, the removed portion including at least the part of the seed crystalline layer above the opening, so that a remaining portion of the seed crystalline layer required for crystal growth is left around the opening;
(e) oxidizing the remaining portion of the seed crystalline layer which is left on the surface of the semiconductor substrate inside the opening and/or a surface of the semiconductor substrate inside the opening, to grow an oxide film within the opening, to interrupt the connection between the seed crystalline layer which is left around the opening and the semiconductor substrate;
and
(f) epitaxially growing the seed crystalline layer which is left around the opening, to form a semiconductor growth layer covering the portion of the insulation layer outside of the vicinity of the opening.

4 more elements

Dependencies are inferred from the claim text.

Method of manufacturing a semiconductor device having a semiconductor growth layer completely insulated from a substrate

Life of this patent

Method of manufacturing a semiconductor device having a semiconductor growth layer completely insulated from a substrate

Life of this patent

Abstract

Claims32