Optoelectric device with a very low series resistance

An optoelectronic device having a III-V substrate (10), a lower, n-doped III-V material semiconductor confinement layer (14) in contact with the substrate (10), an active zone (22) having at least one not intentionally doped III-V material semiconductor active layer (16) located on the lower confinement layer (14), an upper, p-doped III-V material semiconductor confinement layer (24) covering the active zone, the forbidden energy band gap of the active layer being below that of the confinement layers, a first metal coating (28) placed on the upper confinement layer and a second metal coating (12) placed on the substrate, said device being characterized in that it comprises, between the active layer and the upper confinement layer a strongly n-doped, quaternary III-V material semiconductor stopping layer (30) stopping the diffusion of doping ions from the upper confinement layer, said stopping layer (30) having a thickness smaller than that of the active layer and also forming part of the active zone.