Corrosion-resistant member for chemical apparatus using halogen series corrosive gas
AssigneeNGK Insulators, Ltd.
InventorsRyusuke Ushikoshi, Kazuhiro Nobori, Yusuke Niori, Koichi Umemoto, Hiromichi Kobayashi, Toshihiko Honda, Kenji Kawabata
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Abstract
An excellent corrosion resistant member of a ceramic heater for semiconductor production apparatuses to be exposed to a halogen series corrosive gas is provided. The corrosion resistant member uses one of an aluminum nitride and alumina sintered body as a substrate. A ceramic heater using the corrosion resistive member is also disclosed as well as a semiconductor heating device using the ceramic heater.
Claims23
An apparatus comprising a substrate of aluminum nitride or alumina having a corrosion resistant outer surface film of aluminum trifluoride.
A corrosion-resistant member to be exposed in use to a halogen series corrosive gas, comprising one of an aluminum nitride and alumina substrate, and a corrosion resistant outer surface film of aluminum trifluoride, said outer surface film contacting the corrosive gas.
A ceramic heater, comprising a ceramic substrate comprising one of a dense aluminum nitride sintered body and a dense alumina sintered body, said sintered body having a corrosion resistant outer surface film of aluminum trifluoride, a resistive heating body made of a heat-resistant metal embedded in the interior of the ceramic substrate, and a block-shaped terminal electrically connected to the resistive heating body and embedded in the ceramic substrate so as to expose the end surface thereof from the ceramic substrate, the block-shaped terminal being formed of a heat-resistant metal having a coefficient of thermal expansion of not less than the coefficient of thermal expansion of the ceramic substrate.
A semiconductor wafer heating device, comprising a ceramic heater consisting of a ceramic substrate comprising one of an aluminum nitride sintered body and a dense alumina sintered body, said sintered body having a corrosion resistant outer surface film of aluminum trifluoride, a resistive heating body made of a heat-resistant metal embedded in the ceramic substrate, and a plurality of terminals connected to the resistive heating body and exposed to a surface other than a wafer-heating surface of the ceramic substrate;
- a retaining member arranged in a housing of the heating device for retaining the ceramic heater;
- an elongated electrode member one end of which is connected to the terminal;
- a lead wire connected to the other end of the elongated electrode terminal;
- and a tubular body made of an inorganic insulative material enclosing at least one end of the electrode member, an end of the tubular body being gastightly joined to the ceramic substrate, the tubular body being inserted through a throughhole of the housing, and the housing and the tubular body being gastightly sealed from each other.
A semiconductor wafer heating device, comprising a ceramic heater consisting of a ceramic substrate comprising one of an aluminum nitride sintered body and a dense alumina sintered body, said sintered body having a corrosion resistant outer surface film of aluminum trifluoride, a resistive heating body made of a heat-resistant metal embedded in the ceramic substrate, and a plurality of terminals connected to the resistive heating body and exposed to a surface other than a wafer heating surface of the ceramic substrate;
- a retaining member arranged in a housing of the heating device for retaining the ceramic heater;
- a temperature-measuring device one end of which is inserted in the ceramic substrate;
- and a tubular body made of an inorganic insulative material enclosing the temperature-measuring device, and an end of the tubular body being joined to the ceramic substrate, the tubular body being inserted through a throughhole of the housing, and the housing and the tubular body being gastightly sealed from each other.
Dependencies are inferred from the claim text.