Integrated monolithic electrooptical component comprising on the same substrate an electrooptical modulator (M) formed from a stack of semiconductor layers, whereof one layer (10) is absorbent, a semiconductor laser (L) formed from a stack of semiconductor layers, whereof one (10) is active, means (Vd, 20, 22) for applying to the stack of laser layers a forward voltage crating an electric field perpendicular to the plane of the layers, the laser then emitting by its active layer (10) a radiation (26) traversing the absorbent layer of the modulator in the plane of said layer, means (Vi, 20, 22) for applying to the stack of layers of the modulator (M) a reverse voltage creating an electric field perpendicular to the plane of the layers to modulate the absorption of the radiation traversing the modulator, characterized in that the active layer of the laser (L) and the absorbent layer of the modulator (M) are both constituted by the same epitaxied structure of the highly coupled composition superlattice type (10) with alternation of the semiconductor layers of different compositions.