Plasma system comprising hollow mesh plate electrode

A plasma system characterized in that provision is made, between a plasma generation chamber and a substrate treatment chamber, of a mesh plate for plasma separation having a plurality of holes and source gas supply ports made near the holes of the mesh plate and in that a high frequency electrical field is applied between an upper electrode in the plasma generation chamber and the mesh plate, which is arranged in parallel facing said upper electrode, so plasma is generated, the plasma and a source gas supplied from the source gas supply ports being made to react near each of the holes, whereby the reaction product is made to deposit on a substrate placed in the substrate treatment chamber, further characterized in that the source gas supply ports are made to correspond at least one with each of the holes.

A plasma system characterized in that provision is made, between a plasma generation chamber and a substrate treatment chamber, of a mesh plate for plasma separation having a plurality of holes and source gas supply ports made near the holes of the mesh plate and in that a high frequency electrical field is applied between an upper electrode in the plasma generation chamber and the mesh plate, which is arranged in parallel facing said upper electrode, so plasma is generated, the plasma and a source gas supplied from said source gas supply ports being made to react near each of the holes, whereby the reaction product is made to deposit on a substrate placed in the substrate treatment chamber, further characterized in that the mesh plate is made of a hollow construction having a front surface closest to said upper electrode and a rear surface closest said substrate treatment chamber, said holes including side walls extending between said front and rear surfaces, and said source gas supply ports comprising clearance portions formed between said rear surface and said side walls of each of the holes passing through the mesh plate.

A plasma system characterized in that provision is made, between a plasma generation chamber and a substrate treatment chamber, of a mesh plate for plasma separation having a plurality of holes and source gas supply ports made near the holes of the mesh plate and in that a high frequency electrical field is applied between an upper electrode in the plasma generation chamber and the mesh plate, which is arranged in parallel facing said upper electrode, so plasma is generated, the plasma and a source gas supplied from said source gas supply ports being made to react near each of the holes, whereby the reaction product is made to deposit on a substrate placed in the substrate treatment chamber, further characterized in that the mesh plate is made of a hollow construction having a front surface closest to said upper electrode and a rear surface closest said substrate treatment chamber, said holes including side walls extending between said front and rear surfaces, and said source gas supply ports being formed as openings in the middles of the side walls of each of the holes passing through the mesh plate.

A plasma system characterized in that provision is made, between a plasma generation chamber and a substrate treatment chamber, of a mesh plate for plasma separation having a plurality of holes and in that a high frequency electrical field is applied between an upper electrode in the plasma generation chamber and the mesh plate, which is arranged in parallel facing said upper electrode, so plasma is generated, the plasma and an etching gas supplied from said source gas supply ports being made to react near each of the holes, whereby the thus produced active seeds are made to irradiate on a substrate placed in the substrate treatment chamber, further characterized in that the source gas supply ports are made to correspond at least one with each of the holes.

A plasma system characterized in that provision is made, between a plasma generation chamber and a substrate treatment chamber, of a mesh plate for plasma separation having a plurality of holes and in that a high frequency electrical field is applied between an upper electrode in the plasma generation chamber and the mesh plate, which is arranged in parallel facing said upper electrode, so plasma is generated, the plasma and an etching gas supplied from said source gas supply ports being made to react near each of the holes, whereby the thus produced active seeds are made to irradiate on a substrate placed in the substrate treatment chamber, further characterized in that the mesh plate is made of a hollow construction having a front surface closest to said upper electrode and a rear surface closest said substrate treatment chamber, said holes including side walls extending between said front and rear surfaces, and said source gas supply ports comprising clearance portions formed between said rear surface and said side walls of each of the holes passing through the mesh plate.

A plasma system characterized in that provision is made, between a plasma generation chamber and a substrate treatment chamber, of a mesh plate for plasma separation having a plurality of holes and in that a high frequency electrical field is applied between an upper electrode in the plasma generation chamber and the mesh plate, which is arranged in parallel facing said upper electrode, so plasma is generated, the plasma and an etching gas supplied from said source gas supply ports being made to react near each of the holes, whereby the thus produced active seeds are made to irradiate on a substrate placed in the substrate treatment chamber, further characterized in that the mesh plate is made of a hollow construction having a front surface closest to said upper electrode and a rear surface closest said substrate treatment chamber, said holes including side walls extending between said front and rear surfaces, and said source gas supply ports being formed as openings in the middles of the side walls of each of the holes passing through the mesh plate.