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AssigneeInternational Business Machines Corporation
InventorsHenry J. Grabarz, Alfred Grill, William M. Holber, Joseph S. Logan, James T. C. Yeh
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An electron cyclotron resonance plasma heating apparatus system and process in which microwave energy is transmitted directly in an axial direction through an evacuated chamber to generate energetic electrons. These energetic electrons spiral around the magnetic field lines formed by the solenoid and spiral substantially parallel to the axis. A metal atom vapor source transmits the metal atom vapor into the chamber through a housing port in the chamber wall. The metal atom vapor source in the housing is out of the line of sight of the substrate. The metal atoms are ionized by the energized electrons, and these ionized metal atoms are confined to the plasma column substantially free of neutral atoms as such ionized metal approaches and contacts the substrate in said evacuated chamber. In this way, the ionized metal atoms substantially avoid contact with the wall of chamber. A sputter target of a second metal may be placed in the plane of the substrate and a bias voltage applied to the target. Atoms of the second metal are then sputtered off and ionized by the plasma and are deposited on the substrate with the first metal ions.
A method of filling previously formed passages in a semiconductor substrate using a metal plating apparatus of the electron cyclotron resonance plasma heating type, comprising the steps of:
A metal plating system of the electron cyclotron resonance plasma heating type for filling previously formed passages in a semiconductor substrate comprising:
A method of filling a previously formed high aspect ratio passage in a semiconductor substrate using a metal plating apparatus of the electron cyclotron resonance plasma heating type, including an evacuated chamber having an axis, the method comprising the steps of:
Dependencies are inferred from the claim text.