Method for forming doped regions within a semiconductor substrate

A method for forming N doped well regions within a semiconductor integrated circuit wherein N is a positive integer greater than one, the method comprising the steps of:

• providing a base layer of material,
• forming a masking layer overlying the substrate, the masking layer having N regions wherein each of the N regions of the masking layer have a different feature geometry;
• using a single doping step to form all of the N doped well regions within the base layer of material, each of the N doped well regions corresponding to one of the N regions of the masking layer, each of the N doped well regions having a different doping concentration;
• forming a first transistor device from one of the N doped well regions;
• and
• forming a second transistor device within another of the N doped well regions wherein the second transistor device is separate and distinct from the first transistor device.

A method for forming a first doped region and a second doped region of a semiconductor integrated circuit, the method comprising the steps of:

• providing a substrate having a first portion and a second portion;
• forming a masking layer over the substrate, the masking layer having a first portion which overlies the first portion of the substrate and a second portion which overlies the second portion of the substrate;
• defining both a first pattern within the first portion of the masking layer and a second pattern within the second portion of the masking layer;
• doping the substrate with dopant atoms in a single doping process to form both the first doped region and second doped region within the substrate, the first doped region having a first doping concentration and the second doped region having a second doping concentration wherein the first and second doping concentrations are measurably different;
• forming a first transistor device from the first doped region;
• and
• forming a second transistor device within the second doped region wherein the second transistor device and the first transistor device have separate control electrode regions.

A method for forming a first doped region and a second doped region of a semiconductor integrated circuit, the method comprising the steps of:

• providing a substrate;
• forming a patterned masking layer overlying the substrate, the patterned masking layer having a first patterned region and a second patterned region wherein the first and second pattern regions are patterned differently;
• using a single doping step through the patterned masking layer to form both the first doped region and second doped region within the substrate, the first doped region having a first doping concentration and the second doped region having a second doping concentration which is different from the first doping concentration;
• forming a metal oxide semiconductor (MOS) device within the first doped region;
• and
• forming a bipolar device using the second doped region.

A method for forming a first doped region and a second doped region of a semiconductor integrated circuit, the method comprising the steps of:

• providing a substrate having a surface;
• forming a masking layer overlying the substrate, the masking layer having a first region and a second region wherein the first region of the masking layer has a feature defined by a first geometry and the second region of the masking layer has a feature defined by a second geometry;
• using a single doping step to form both the first doped region and second doped region within the substrate, the first doped region having a first doping concentration and being formed under the first region of the masking layer, and the second doped region having a second doping concentration and being formed under the second region of the masking layer, the first doping concentration being different from the second doping concentration;
• removing the masking layer;
• and
• forming a semiconductive layer overlying the surface of the substrate to raise the surface of the substrate to form a raised substrate surface, the raised substrate surface making the first doped region into a first buried layer which underlies and is not in direct contact with the raised substrate surface and making the second doped region into a second buried layer which underlies and is not in direct contact with the raised substrate surface.