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US 5,300,453 AGranted
Method for producing semiconductor device
AssigneeRohm Co., Ltd.
InventorsYuji Okamura, Koichi Kudo, Yasuo Aki
Life of this patent
Estimating the term…
Abstract
A method for producing a semiconductor device, is composed of steps of: covering a lower side of a semiconductor wafer with a heavy metal and disposing the semiconductor wafer in a chamber; causing the heavy metal to diffuse into the semiconductor wafer by heating the semiconductor wafer with a heat source having a small thermal capacity; and thereafter, ceasing to heat with the heat source, then charging the chamber with a cooling gas.
Claims11
A method for producing a semiconductor device, which comprises steps of:
- covering a lower side of a semiconductor wafer with a heavy metal and disposing the semiconductor wafer in a chamber;
- causing the heavy metal to diffuse into the semiconductor wafer by heating the semiconductor wafer with a heat source having a small thermal capacity;
- and thereafter, ceasing to heat with the heat source, then charging the chamber with a cooling gas.
Dependencies are inferred from the claim text.