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US 5,297,158 AGranted
Semiconductor laser device including a gallium-aluminum arsenic compound
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHiroki Naitou, Masahiro; Kume, Issei Ota, Hirokazu Shimizu
Life of this patent
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Abstract
In a semiconductor laser device, a Ga.sub.1-y Al.sub.y As cladding layer of a conduction type is provided on at least one principal plane of an active layer, while a Ga.sub.1-Z Al.sub.Z As current blocking layer of the other conduction type is provided on the cladding layer and has a stripe-like window. The AlAs mode fractions Y and Z has a relation, Z>Y. The semiconductor laser device has low noises and a low operating current value.
Claims36
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one side of the principal planes of the Ga.sub.1-X Al.sub.X As layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- and
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided on the two sides in the longitudinal direction of the stripe-like current channel portion of the Ga.sub.1-Y Al.sub.Y As layer;
- wherein the AlAs mole fractions X, Y and Z has a following relation:
- Z>Y>X.gtoreq.O.
3 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided on the two sides in the longitudinal direction of the stripe-like current channel portion;
- and
- a GA.sub.1-B Al.sub.B As layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-B Al.sub.B As layer being provided between the Ga.sub.1-Y Al.sub.Y As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- wherein the AlAs mole fractions X, Y, Z and B has following relations:
- Z>Y>X.gtoreq.O
- and
- B>X.
6 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- and
- one or more Ga.sub.1-E Al.sub.E As layers provided on the Ga.sub.1-Z Al.sub.Z As layer, wherein the AlAs mole fractions X, Y, Z and E has following relations:
- Z>Y>X.gtoreq.O,
- and
- Z>E.gtoreq.O.
5 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the Ga.sub.1-X Al.sub.X As layer;
- wherein the AlAs mole fractions X, Y, Z and D has a following relation:
- Z>Y>D>X.gtoreq.O.
3 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- a Ga.sub.1-B Al.sub.B As layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-B Al.sub.B As layer being provided between the Ga.sub.1-Y Al.sub.Y As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- and
- one or more Ga.sub.1-E Al.sub.E As layers provided on the Ga.sub.1-Z Al.sub.Z As layer,
- wherein the AlAs mole fractions X, Y, Z, B and E has following relations:
- Z>Y>X.gtoreq.O,
- Z>E.gtoreq.O
- and
- B>X.
8 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- a Ga.sub.1-B Al.sub.B As layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-B Al.sub.B As layer being provided between the Ga.sub.1-Y Al.sub.Y As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the Ga.sub.1-X Al.sub.X As layer;
- wherein the AlAs mixed crystal ratios X, Y, Z, B and D has following relations:
- Z>Y>D>X.gtoreq.O
- and
- B>X.
7 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- one or more Ga.sub.1-E Al.sub.E As layers provided on the Ga.sub.1-Z Al.sub.Z As layer;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the Ga.sub.1-X Al.sub.X As layer;
- wherein the AlAs mole fractions X, Y, Z, D and E has following relations:
- Z>Y>D>X.gtoreq.O
- and
- Z>E.gtoreq.O.
7 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- a Ga.sub.1-B Al.sub.B As layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-B Al.sub.B As layer being provided between the As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- one or more Ga.sub.1-E Al.sub.E As layers provided on the Ga.sub.1-Z Al.sub.Z As layer;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the Ga.sub.1-X Al.sub.X As layer;
- wherein the AlAs mole fractions X, Y, Z, B, D and E has following relations:
- Z>Y>D>X.gtoreq.O,
- Z>E.gtoreq.O
- and
- B>X.
9 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As layer;
- a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- and
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- wherein the AlAs mole fractions X, Y1, Y2, C and Z has following relations:
- Z>Y2>C>X.gtoreq.O,
- and
- Z>Y1>X.
7 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As
- a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- and
- a Ga.sub.1-B Al.sub.B As layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-B Al.sub.B As layer being provided between the Ga.sub.1-Y Al.sub.Y As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- wherein the AlAs mole fractions X, Y1, Y2, B, C and Z has following relations:
- Z>Y2>C>X.gtoreq.O,
- Z>Y1>X
- and
- B>X.
9 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As
- a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- and
- one or more Ga.sub.1-E Al.sub.E As layers provided on the Ga.sub.1-Z Al.sub.Z As layer;
- wherein the AlAs mole fractions X, Y1, Y2, C and Z has following relations:
- Z>Y2>C>X.gtoreq.O,
- Z>E.gtoreq.O
- and
- Z>Y1>X.
9 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As
- a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the Ga.sub.1-X Al.sub.X As layer;
- Z has following relations:
- Z>Y2>C>X.gtoreq.O
- and
- Z>Y1>D>X.
8 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As
- a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- a Ga.sub.1-B Al.sub.B As layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-B Al.sub.B As layer being provided between the Ga.sub.1-Y Al.sub.Y As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- and
- one or more Ga.sub.1-E Al.sub.E As layers provided on the Ga.sub.1-Z Al.sub.Z As layer;
- wherein the AlAs mole fractions X, Y1, Y2, B, C, E and Z has following relations:
- ##EQU1##
7 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As
- a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- a Ga.sub.1-B Al.sub.B As layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the layer, which Ga.sub.1-B Al.sub.B As layer being provided between the Ga.sub.1-Y Al.sub.Y As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the Ga.sub.1-X.sub.Al.sub.X As layer;
- wherein the AlAs mole fractions X, Y1, Y2, B, C, D and Z has following relations:
- Z>Y2>C>X.gtoreq.O,
- Z>Y1>D>X
- and
- B>X.
10 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- one or more Ga.sub.1-e Al.sub.E As layers provided on the Ga.sub.1-Z Al.sub.Z As layer;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the Ga.sub.1-X Al.sub.X As layer;
- wherein the AlAs mole fractions X, Y1, Y2, C, D, E and Z has following relations:
- Z>Y2>C>X.gtoreq.O,
- Z>E.gtoreq.O,
- and
- Z>Y1>D>X.
9 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As layer;
- a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- a Ga.sub.1-B Al.sub.B As layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the Ga.sub.1-Y Al.sub.Y AS layer, which Ga.sub.1-B Al.sub.B As layer being provided between the Ga.sub.1-Y Al.sub.Y As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- one or more Ga.sub.1-E Al.sub.E As layers provided on the Ga.sub.1-Z Al.sub.Z As layer;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the Ga.sub.1-X Al.sub.X As layer;
- wherein the AlAs mixed crystal ratios X, Y1, Y2, B, C, D, E and Z has following relations:
- ##EQU2## and
- B>X.
9 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one of the principal planes of the active layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- and
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- wherein the AlAs mole fractions Y and Z has a following relation:
- Z>Y where Y>O.
3 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one of the principal planes of the active layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- and
- a GaAlAs layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which GaAlAs layer being provided between the Ga.sub.1-Y Al.sub.Y As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- wherein the AlAs mole fractions Y and Z has a following relation:
- Z>Y where Y>O.
4 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one of the principal planes of the active layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- and one or more Ga.sub.1-E Al.sub.E As layers provided on the Ga.sub.1-Z Al.sub.Z As layer;
- wherein the AlAs mole fractions Y, Z and E has following relations:
- Z>Y where Y>O
- and
- Z>E.gtoreq.O.
5 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one of the principal planes of the active layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the active layer;
- wherein the AlAs mole fractions Y, Z and D has a following relation:
- Z>Y>D where D>O.
4 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one of the principal planes of the active layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- a GaAlAs layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which GaAlAs layer being provided between the Ga.sub.1-Y Al.sub.Y As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- and
- one or more Ga.sub.1-E Al.sub.E As layers provided on the Ga.sub.1-Z Al.sub.Z As layer;
- wherein the AlAs mole fractions Y, Z and E has a following relations:
- Z>Y where Y>O
- and
- Z>E.gtoreq.O.
7 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one of the principal planes of the active layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- a GaAlAs layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which GaAlAs layer being provided between the Ga.sub.1-Y Al.sub.Y As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the active layer;
- wherein the AlAs mole fractions Y, Z and D has a following relation:
- Z>Y>D where D>O.
5 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one of the principal planes of the active layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- one or more Ga.sub.1-E Al.sub.E As layers provided on the Ga.sub.1-Z Al.sub.Z As layer;
- a Ga.sub.1-D Al.sub.D As layer applied to the active layer;
- wherein the AlAs mole fractions Y, Z, D and E has following relations:
- Z>Y>D where D>O
- and
- Z>E.gtoreq.O.
6 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y Al.sub.Y As layer of a conduction type, provided on at least one of the principal planes of the active layer, which Ga.sub.1-Y Al.sub.Y As layer having a stripe-like current channel portion extending in a direction opposite to the active layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- a GaAlAs layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which GaAlAs layer being provided between the Ga.sub.1-Y Al.sub.Y As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- one or more Ga.sub.1-E Al.sub.E As layers provided on the Ga.sub.1-Z.sub.Al.sub.Z As layer;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the layer;
- wherein the AlAs mole fractions Y, Z, D and E has following relations:
- Z>Y>D where D>O
- and
- Z>E.gtoreq.O.
8 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the active layer;
- a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- and
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- wherein the AlAs mole fractions Y1, Y2, C and Z has following relations:
- Z>Y2>C
- and
- Z>Y1 where C>O>1>O and D>O
7 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the active layer;
- a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- and
- a GaAlAs layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which GaAlAs layer being provided between the Ga.sub.1-Y Al.sub.Y As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- wherein the AlAs mole fractions Y1, Y2, C and Z has following relations:
- Z>Y2>C
- and
- Z>Y1 where C>O, >1>O and D>O.
7 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the active layer;
- a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- and
- one or more Ga.sub.1-E Al.sub.E As layers provided on the Ga.sub.1-Z Al.sub.Z As layer;
- wherein the AlAs mole fractions Y1, Y2, C, E and Z has following relations:
- Z>Y2>C,
- Z>E.gtoreq.O
- and
- Z>Y1 where C>O, y1>O, and D>O.
9 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the active layer;
- a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the active layer;
- wherein the AlAs mole fractions Y1, Y2, C, D and Z has following relations:
- Z>Y2>C,
- and
- Z>Y1>D where C>O, y1>O, and D>O.
8 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the active layer;
- a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- a GaAlAs layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which GaAlAs layer being provided between the Ga.sub.1-Y Al.sub.Y As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- and
- one or more Ga.sub.1-E Al.sub.E As layers provided on the Ga.sub.1-Z Al.sub.Z As layer;
- wherein the AlAs mole fractions Y1, Y2, C, E and Z has following relations:
- Z>Y2>C,
- Z>E.gtoreq.O
- and
- Z>Y1>C where C>O, y1>O, and D>O.
10 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the active layer;
- a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to the Ga.sub.1-Ya Al.sub.Y1 As layer;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- a GaAlAs layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which GaAlAs layer being provided between the Ga.sub.1-Y Al.sub.Y As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the active layer;
- wherein the AlAs mole fractions Y1, Y2, C, D and Z has following relations:
- Z>Y2>C
- and
- Z>Y1>D where C>O, y1>O, and D>O.
9 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the active layer;
- a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- one or more Ga.sub.1-E Al.sub.E As layers provided on the Ga.sub.1-Z Al.sub.Z As layer;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the active layer;
- wherein the AlAs mole fractions Y1, Y2, C, D, E and Z has following relations:
- Z>Y2>C,
- Z>E.gtoreq.O
- and
- Z>Y>D where C>O, y1>O, and D>O.
10 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the active layer;
- a Ga.sub.1-C Al.sub.C As layer of the conduction type applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the conduction type, applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being a stripe-like current channel portion;
- the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being provided along the two sides in the longitudinal direction of the stripe-like current channel portion;
- a GaAlAs layer of 0.1 .mu.m or less of thickness of the same conduction type as the conduction type of the Ga.sub.1-Y Al.sub.Y As layer, which GaAlAs layer being provided between the Ga.sub.1-Y Al.sub.Y As layer and the Ga.sub.1-Z Al.sub.Z As layer;
- one or more Ga.sub.1-E Al.sub.E As layers provided on the Ga.sub.1-Z Al.sub.Z As layer;
- a Ga.sub.1-D Al.sub.D As layer applied to the active layer;
- wherein the AlAs mole fractions Y1, Y2, C, D, E and Z has following relations:
- Z>Y2>C,
- Z>E.gtoreq.O
- and
- Z>Y1>D where C>O, y1>O, and D>O.
10 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As layer;
- a Ga.sub.1-C Al.sub.C As layer of the conduction type, applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Z Al.sub.Z As layer having a stripe-like window;
- and
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the same conduction type as that of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being provided in the window;
- wherein the AlAs mole fractions X, Y1, Y2, C and Z has following relations:
- Z>Y2>C>X.gtoreq.O,
- and
- Z>Y1>X.
7 more elements
A semiconductor laser device, comprising:
- a Ga.sub.1-X Al.sub.X As layer as an active layer;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the Ga.sub.1-X Al.sub.X As a Ga.sub.1-C Al.sub.C As layer of the conduction type, applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Z Al.sub.Z As layer having a stripe-like window;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the same conduction type as that of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being provided in the window;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the active layer;
- wherein the AlAs mole fractions X, Y1, Y2, C, D and Z has following relations:
- Z>Y2>C>X.gtoreq.O
- and
- Z>Y1>D>X.
7 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the active layer;
- a Ga.sub.1-C Al.sub.C As layer of the conduction type, applied the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Z Al.sub.Z As layer having a stripe-like window;
- and
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the same conduction type as that of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being provided in the window;
- wherein the AlAs mole fractions Y1, Y2, C and Z has following relations:
- Z>Y2>C,
- and
- Z>Y1 where C>O, y1>O, and D>O.
7 more elements
A semiconductor laser device, comprising:
- an active layer having a quantum well structure;
- a Ga.sub.1-Y1 Al.sub.Y1 As layer of a conduction type, provided on at least one of the principal planes of the active layer;
- a Ga.sub.1-C Al.sub.C As layer of the conduction type, applied to the Ga.sub.1-Y1 Al.sub.Y1 As layer;
- a Ga.sub.1-Z Al.sub.Z As layer of the other conduction type than the conduction type of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Z Al.sub.Z As layer being applied to the Ga.sub.1-C Al.sub.C As layer, which Ga.sub.1-Z Al.sub.Z As layer having a stripe-like window;
- a Ga.sub.1-Y2 Al.sub.Y2 As layer of the same conduction type as that of the Ga.sub.1-Y1 Al.sub.Y1 As layer, which Ga.sub.1-Y2 Al.sub.Y2 As layer being provided in the window;
- and
- a Ga.sub.1-D Al.sub.D As layer applied to the active layer;
- wherein the AlAs mole fractions Y1, Y2, C, D and Z has following relations:
- Z>Y2>C
- and
- Z>Y1>D where C>O, y1>O, and D>O
8 more elements
Dependencies are inferred from the claim text.