Random access memory device with redundant row decoder for controlling a plurality of redundant word lines

A random access memory device fabricated on a single semiconductor chip, comprising:

• a) a plurality of regular memory cells arranged in rows and columns, and respectively storing data bits, each of said regular memory cells having a row address indicated by a plurality of row address bits and a column address indicated by a plurality of column address bits;
• b) a plurality of regular word lines respectively associated with said rows of said regular memory cells, and selectively driven for making one of said rows of said regular memory cells accessible;
• c) a plurality of redundant memory cells arranged in rows and columns, each of said rows of said regular memory cells being replaceable with one of said rows of said redundant memory cells for storing data bits;
• d) a plurality of redundant word lines respectively associated with said rows of said redundant memory cells, and selectively driven for making one of said rows of said redundant memory cells accessible;
• e) at least one programming circuit storing address bits representative of a row address assigned to one of said rows including at least one defective regular memory cell, and operative to determine whether said address bits are matched with predetermined row address bits selected from said plurality of row address bits, said at least one programming circuit producing a matching signal when said address bits are matched with said predetermined row address bits;
• and
• f) at least one redundant row address decoder circuit associated with first redundant word lines selected from said plurality of redundant word lines for allowing said first redundant word lines to be selectively accessible, and supplied with said matching signal and with at least one row address bits and a corresponding complementary bit indicative of one of said first redundant word lines, said at least one redundant row address decoder circuit selectively driving one of said first redundant word lines in the presence of said matching signal, wherein
• said at least one redundant row address decoder circuit comprises a NAND gate supplied with said matching signal for producing an enable signal, and a plurality of NOR gates enabled with said enable signal and respectively coupled with said first redundant word lines, said at least one address bit and the complementary bit thereof are selectively supplied to said plurality of NOR gates, respectively, wherein one of said first redundant word lines is driven depending upon an output of each of said NOR gates, and wherein
• said at least one redundant row address decoder circuit forms a part of a redundant row address decoder unit selectively driving said plurality of redundant word lines,
• said plurality of NOR gates includes a first NOR gate supplied with said at least one row address bit and with another row address bit, a second NOR gate supplied with said at least one row address bit and with another complementary row address bit, a third NOR gate supplied with said complementary bit of said at least one row address bit and with said another complementary bit of said another row address bit selected from said plurality of row address bits, a fourth NOR gate supplied with said complementary bit of said at least one row address bit and with said another row address bit, said another row address bit and said another complementary row address bit corresponding to a row address of another one of said rows of said redundant memory cells, said at least one programming circuit being supplied with said plurality of row address bits except for said at least one row address bit and said another row address bit.

A random access memory device fabricated on a single semiconductor chip, comprising:

• a) a plurality of regular memory cells arranged in a plurality of memory lines, each of said memory lines being assigned an address represented by a plurality of address bits, two of said plurality of regular memory lines being grouped to form a plurality of memory line pairs;
• b) a plurality of redundant memory cells arranged in a plurality of redundant lines, two of said redundant lines being grouped to form a plurality of redundant line pairs, each of said memory line pairs being replaceable with one of said plurality of redundant line pairs;
• c) at lease one programming circuit storing address bits representative of a line address assigned to one of said memory lines including at least one defective regular memory cell, and operative to determine whether said address bits are matched with predetermined address bits selected from said plurality of address bits, said at least one programming circuit producing a matching signal when said address bits are matched with said predetermined address bits;
• and
• d) at lease one address decoder circuit associated with one of said redundant line pairs, and responsive to said matching signal and at least one address bit and a corresponding complementary bit of said plurality of address bits except for said predetermined address bits for designating one of the redundant lines of the associated redundant line pair.

A memory device comprising:

• a first memory cell array having a plurality of memory cells arranged in rows and columns;
• a second memory cell array having a plurality of memory cells arranged in rows and columns;
• a programming circuit for programming predetermined bits selected from address bits representing a row address assigned to a predetermined row in said first memory cell array;
• and
• a decoder circuit responsive to a signal from said programming circuit, and allowing a plurality of rows in said second memory cell array to be selected instead of a plurality of rows in said first memory cell array including said predetermined row.