Driver circuit for sinking current to two supply voltages
AssigneeSiliconix Incorporated
InventorsRichard K. Williams, Barry J. Concklin
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AssigneeSiliconix Incorporated
InventorsRichard K. Williams, Barry J. Concklin
Estimating the term…
An insulated gate bipolar transistor (IGBT) gate driver circuit with a push-pull output stage which provides current sinking to two power supply rails. Current sinking to a low impedance power supply rail (GND) via a high current NPN bipolar transistor provides fast IGBT turn off. A PNP bipolar transistor forward biased emitter-base junction in series with an N channel field effect transistor provides current-limited current sinking to a higher impedance power supply rail (V.sub.EE). The on resistance of the N channel field effect transistor can be chosen to set the maximum current drawn from the higher impedance V.sub.EE power supply rail. This current-limiting avoids the need for a second low impedance power supply. The transition of the output of the driver from ground to V.sub.EE is only a function of the output voltage output by the driver. It is not a function of any timed switching of transistors.
A driver circuit, having an input node for receiving a control signal and an output node, said circuit comprising:
A circuit for controlling an insulated gate bipolar transistor, having an input terminal, an intermediate node for receiving a control signal, and an output node, said circuit comprising:
A circuit, having an input terminal, an input node and an output node, said circuit comprising:
A method of driving a transistor having an input terminal, comprising the steps of:
A method of driving a transistor having an input terminal, comprising the steps of:
A method of driving a transistor having an input terminal, comprising the steps of:
A method, comprising the steps of:
A circuit having an input node and an output node, the circuit comprising:
A circuit having an input node and an output node, the circuit comprising:
Dependencies are inferred from the claim text.