Power semiconductor module with multiple shielding layers

A semiconductor device comprising:

• a metal substrate;
• a first insulating layer formed on said metal substrate;
• a first shield pattern composed of conductors formed on said first insulating layer;
• a supply terminal to which a reference potential is applied;
• first connection means for connecting said first shield pattern to said supply terminal;
• a second insulating layer formed on said first shield pattern;
• second and third shield patterns composed of conductors formed on said second insulating layer;
• a third insulating layer formed on said second shield pattern;
• a fourth insulating layer formed on said third shield pattern;
• first and second power switching elements formed on said first insulating layer, said first and second power switching elements each having a first main terminal and a second main terminal, the second main terminal of said first power switching element being connected to the first main terminal of said second power switching element to form an output node;
• a first control circuit formed on said third insulating layer for turning said first power switching element ON/OFF;
• a second control circuit formed on said fourth insulating layer for turning said second power switching element ON/OFF;
• second connection means for connecting said second shield pattern to the second main terminal of said first power switching element;
• and
• third connection means for connecting said third shield pattern to the second main terminal of said second power switching element.