Semiconductor pressure sensor for sensing pressure applied thereto

Abstract

A semiconductor pressure sensor according to the present invention comprises a semiconductor substrate having a first surface, a second surface opposite to the first surface and a recess formed in the first surface, the recess defining an interior surface including a bottom surface; and a diffusion region extending from the adjacency of the bottom surface to the second surface. A pressure-sensitive resistance of the semiconductor pressure sensor is formed in the vicinity of the bottom surface of a diaphragm. Therefore, the pressure-sensitive resistance can be formed so as to be brought into alignment with the position of the diaphragm after the formation of the diaphragm. Accordingly, a semiconductor pressure sensor, which does not cause a displacement in position between the diaphragm and the pressure-sensitive resistance and is excellent in accuracy, can be easily fabricated. Further, since the pressure-sensitive resistance can be formed according to the shape of the diaphragm, the diaphragm can be reduced in size and fabricated in the form of a thin film.

Dependencies are inferred from the claim text.