Light emitting semiconductor device having multilayer structure

A semiconductor device comprising:

• a single crystal substrate composed of a III-V compound;
• and
• mixed crystal semiconductors of two types respectively having component compositions of Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1 and Zn.sub.1-x2 Cd.sub.x2 S.sub.y2 Se.sub.1-y2 alternately laminated on said substrate,
• the ratio of components of said mixed crystal semiconductors of two types satisfying the relationship that x.sub.1 is smaller than x.sub.2 and y.sub.1 is greater than y.sub.2.

A semiconductor device comprising:

• a single crystal substrate composed of a III-V compound;
• a Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.1-y layer formed on said substrate;
• a Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1 layer formed on said Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.1-y layer;
• and
• a ZnS.sub.y2 Se.sub.1-y2 layer formed on said Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1 ;
• each of said Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.1-y and said ZnS.sub.y2 Se.sub.1-y2 having a lattice constant substantially equal to that of said substrate,
• said Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1 having a lattice constant different from that of said substrate.

A semiconductor device comprising:

• a single crystal substrate composed of a II-VI compound;
• and
• mixed crystal semiconductors of two types respectively having component composition of Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1 and Zn.sub.1-x2 Cd.sub.x2 S.sub.y2 Se.sub.1-y2 alternately laminated on said substrate,
• the ratio of components of said mixed crystal semiconductors of two types satisfying the relationship that x.sub.1 is smaller than x.sub.2 and y.sub.1 is greater than y.sub.2.

A semi conductor device comprising:

• a single crystal substrate composed of a II-VI compound;
• a Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.1-y layer formed on said substrate;
• a Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1 layer formed on said Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.1-y layers;
• and
• a ZnS.sub.y2 Se.sub.1-y2 layer formed on said Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1 ;
• each of said Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.1-y and said ZnS.sub.y2 Se.sub.1-y2 having a lattice constant substantially equal to that of said substrate,
• said Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1 having a lattice constant different from that of said substrate.