Lateral photo-sensing device, opt-electronic integrated circuit using the lateral photo-sensing device and photo-logic device using the lateral photo-sensing device

An opt-electronic integrated circuit comprising:

• a photo-conductive type lateral photo-sensing device including a first semiconductor layer of a first conductivity type formed on a semi-insulative semiconductor substrate, a second semiconductor layer of a second conductivity type formed on said first semiconductor layer for absorbing a light, a pair of electrodes formed on said second semiconductor layer, thereby forming a rectifying junction at an interface between said electrodes and said second semiconductor layer and a biasing electrode formed on said first semiconductor layer;
• and
• a control circuit for applying a control signal to said biasing electrode in accordance with a detection signal from said lateral photo-sensing device to control an operation condition of said lateral photo-sensing device.

An opt-electronic integrated circuit comprising:

• a photo-conductive type lateral photo-sensing device including a first semiconductor layer of a first conductivity type formed on a semi-insulative semiconductor substrate, a second semiconductor layer of a second conductivity type formed on said first semiconductor layer for absorbing a light, a pair of electrodes formed on said second semi-conductor layer, and a biasing electrode formed on said first semiconductor layer;
• and
• a control circuit for varying a bias voltage to be applied to said biasing electrode in accordance with a level of a detection signal from said lateral photo-sensing device.

An opt-electronic integrated circuit comprising:

• a photo-conductive type lateral photo-sensing device including a first semiconductor layer of a first conductivity type formed on a semi-insulative semiconductor substrate, a second semiconductor layer of a second conductivity type formed on said first semiconductor layer for absorbing a light, a pair of electrodes formed on said second semi-conductor layer, and a biasing electrode formed on said first semiconductor layer;
• and
• a control circuit for varying a bias voltage to be applied to said biasing electrode in accordance with a level of detection signal from said lateral photo-sensing device said control circuit detecting an average level of the detection signal supplied from said lateral photosensing device and applying a bias voltage corresponding to the average level to said biasing electrode.

A photo-logic device comprising:

• a photo-conductive type lateral photo-sensing device including a first semiconductor layer of a first conductivity type formed on a semi-insulative semiconductor substrate, a second semiconductor layer of a second conductivity type formed on said first semiconductor layer for absorbing a light, a pair of electrodes formed on said second semiconductor layer, thereby forming a rectifying junction at an interface between said electrodes and said second semiconductor layer and a biasing electrode formed on said first semiconductor layer;
• and
• optical guide means for guiding at least two signal lights to said second semiconductor layer.