CVD method for forming B.sub.i -containing oxide superconducting films

A method for the preparation of a superconductive ceramic film by chemical vapor deposition comprising the steps of:

• (a) flushing evaporation chambers with an inert gas;
• (b) placing at least three metal organic beta-diketonate complexes in said chambers, the first of said complexes being based on Sr and being placed in a first flushed chamber, the second of said complexes being based on Ca and being placed in a second flushed chamber, the third of said complexes being based on Cu and being placed in a third flushed chamber;
• (c) placing a compound of the formula BiR.sub.3 " where R" is selected from the group consisting of alkyl, alkoxide, aryl and halide in a fourth flushed chamber;
• (d) heating each of said complexes to its vaporizing temperature to cause a source flow comprising vapors of each of said complexes in each respective chamber;
• (e) heating a substrate to a temperature of about 500.degree. C.-700.degree. C. in a heated deposition chamber;
• (f) transporting said vapors into said heated deposition chamber;
• (g) initiating a flow of water vapor into said deposition chamber;
• (h) depositing a film from said vapors onto said substrate in said deposition chamber;
• (i) terminating said source flow;
• (j) maintaining said water vapor flow;
• and
• (k) adjusting the temperature of said substrate to the range of 600.degree. C.-950.degree. C. in flowing oxygen to thereby anneal said film to result in said superconductive ceramic film represented by the formula Bi.sub.2 Sr.sub.2 Ca.sub.n-1 Cu.sub.n oxide;
• n=1, 2, 3.