Method of manufacturing a contact structure for integrated circuits

Abstract

Manufacturing a void-free metal-filled contact by forming an insulation layer about 2,000 .ANG. thick between a substrate and a first conductive layer, forming openings, or contact holes, through the dielectric layer, forming a foundation metal system comprising an approximately 150 .ANG. thick Ti layer, an approximately 1,000 .ANG. thick TiN layer, an approximately 150 .ANG. thick Ti layer and an approximately 1,000 .ANG. thick Pt layer, patterning photoresist over the foundation metal system such that developed photoresist remains only where a conductive material is not desired, forming a conductive layer of gold by a plating process, stripping the photoresist, and ion milling to remove the foundation metal system that exists outside the contact holes. A second insulator layer is deposited and etched back until the gold film is exposed. A metal layer is deposited and patterned so that electrical connection can be made between the contacts and other parts of the circuitry.

Dependencies are inferred from the claim text.