Method for processing the etched surface of a semiconductive or semi-insulating substrate
AssigneeFrance Telecom
InventorAlice Izrael
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Abstract
The present invention concerns a method for processing an etched surface of a semiconductive or semi-insulating substrate. It further concerns integrated circuits manufactured by this method and an anodic oxidation apparatus for implementing the method. The invention is particularly applicable to the manufacture of integrated circuits with ultrafine details (below 1.mu.) and in particular to manufacturing electro-optical devices. Anodic oxidation with controlled voltage and current is used to peel a constant thickness of oxidation off a surface of the substrate so as to improve the subsequent epitaxial growth.
Claims15
A method of processing an etched surface of a semiconductive or semi-insulating substrate, the method comprises the steps of:
- immersing the substrate into an electrolytic bath,
- mounting a first electrode on the substrate to be processed,
- mounting a second electrode in the bath at a selected distance from the surface of the substrate to be processed,
- connecting the first and second electrodes to a source of electricity,
- applying specified magnitudes of current and voltage for a specified time, and
- at least partially removing a formed oxide by peeling away a uniform controlled thickness independent of the orientation of the processed surface.
Dependencies are inferred from the claim text.