Back to results
US 5,296,089 AGranted
Enhanced radiative zone-melting recrystallization method and apparatus
AssigneeMassachusetts Institute of Technology
InventorsChenson K. Chen, James Im
Life of this patent
Estimating the term…
Abstract
A method is provided for zone-melting-recrystallization (ZMR) to produce high quality substantially subboundary-free silicon-on-insulator (SOI) thin films by controlled radiant heating of the silicon film. Using this technique, a much wider experimental parameter range which improves the uniformity of the crystalline quality over the entire SOI film is possible.
Claims10
A method for preparing a SOI wafer having a monocrystalline semiconductor material film on a substrate comprising the steps of:
- supporting the wafer;
- providing a first heater positioned over the wafer, the first heater being stationary relative to the wafer;
- providing a second heater positioned below the wafer, the second heater being stationary relative to the wafer;
- providing a third heater adapted for heating regions of the film to melt the regions by relative motion between the third heater and the wafer;
- radiatively heating the film using the first heater and the second heater such that a relative thermal contribution of the first heater and the second heater produces a base temperature in the film below the melting point of the film;
- heating contiguous regions of the film with radiant energy from the third heater to melt the regions of the film;
- and
- solidifying the contiguous regions of the film to produce substantially monocrystalline semiconductor material.
5 more elements
Dependencies are inferred from the claim text.