Method for manufacturing semiconductor device having grown layer on insulating layer

Abstract

A semiconductor device is manufactured by forming an epitaxial layer (22) insulated from a silicon substrate (2), and forming a device in the epitaxial layer (22). On the semiconductor substrate (2), a silicon dioxide layer (4) is formed (FIG. 2A). Then the silicon dioxide layer (4) is provided with openings (14) (FIG. 2D). Silicon carbide is grown until it protrudes from the openings (14) to thereby form a silicon carbide seed crystal layer (16) (FIG. 2E). Next, oxidation is carried out, allowing a field oxide layer (20) to be bonded at the portion under the openings (14) and the silicon carbide seed crystal layer (16) to be insulated from the silicon substrate (2). Thereafter, epitaxial growth is effected from the silicon carbide seed crystal layer (16), thus obtaining an epitaxially grown layers (22). The device is formed in this epitaxially grown layer (22). The silicon carbide grown layer (22) is isolated from the silicon substrate (2) and has the uniform plane bearing, thus allowing no electrostatic capacitance to be caused due to pn junction with the silicon substrate (2) and high-speed operation to be realized. Moreover, the unique plane bearing facilitates control during the manufacturing process.

Dependencies are inferred from the claim text.