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AssigneeInternational Business Machines Corporation
InventorsLeroy L. Chang, Leo Esaki, Hiro Munekata, Hideo Ohno, Stephan vonMolnar
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A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient to change the material or compound from a paramagnetic state to a locally ordered magnetic state. The material or compound is made by depositing III, and V or IV and a transition element or a rare earth element onto a substrate at conditions such that the transition element or rare earth element that is deposited on the substrate is not in equilibrium with the material or compound. By employing this technique new semiconductor materials or compounds can be made including Ga.sub.1-x Mn.sub.x As and In.sub.1-x Mn As where Mn is present in an amount greater than about 5.4.times.10.sup.20 cm.sup.-3.
A crystalline substance of the formula III-V including as a part of said substance at least one of a transition element or a rare earth element present in an amount at least about 5.4.times.10.sup.20 cm.sup.-3 to change said substance from a paramagnetic state to a locally ordered magnetic state where in said formula III-V:
A crystalline substance of the formula III-V including as part of said substance a transition element present in an amount at least about 5.4.times.10.sup.20 cm.sup.-3 to change said substance from a paramagnetic state to a locally ordered magnetic state where in said formula III-V:
A crystalline substance of the formula:
A crystalline substance of the formula III-V including as a part of said substance at least one of a transition element or rare earth element present in an amount at least about 5.4.times.10.sup.20 cm.sup.-3 to change said substance to a locally ordered magnetic state where in said formula III-V:
A crystalline substance of the formula III-V including as part of said substance a transition element present in an amount at least about 5.4.times.10.sup.20 cm.sup.-3 sufficient to change said substance to a locally ordered magnetic state where in said formula III-V:
A crystalline substance of the formula IV including as a part of said substance at least one of a transition element or rare earth element present in an amount at least about 10.sup.29 cm.sup.-3 to change said substance to a locally ordered magnetic state where, in said formula, IV is an elemental semiconductor from at least one element of Group IVA.
Dependencies are inferred from the claim text.