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US 5,296,047 AGranted
Epitaxial silicon starting material
AssigneeHewlett-Packard Company
InventorRichard A. Fellner
Life of this patent
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Abstract
A silicon starting material for fabricating integrated circuits is desrcibed that comprises a silicon wafer substrate material and a first epitaxial layer grown on the wafer substrate which eliminates stacking faults in the subsequent fabrication of a semiconductor device.
Claims2
A method of fabricating semiconductor devices comprising the steps of:
- growing immediately without any intervening high temperature process steps done before a first epitaxial layer on a silicon wafer substrate to form a starting material, the first epitaxial layer having the same doping type and resistivity as the silicon wafer substrate;
- preparing the starting material for fabricating a semiconductor device in a second epitaxial layer;
- and
- growing the second epitaxial layer on the first epitaxial layer.
1 more element
Dependencies are inferred from the claim text.