US 5,295,148 AGranted

Surface emission type semiconductor laser

AssigneeSeiko Epson Corporation

InventorsKatsumi Mori, Tatsuya Asaka, Hideaki Iwano, Takayuki Kondo

Life of this patent

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Abstract

A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portion. The column-like portion is of rectangular cross-section in a plane parallel to the semiconductor substrate and having longer and shorter sides, whereby the polarization plane of said emitted laser beam is parallel to the direction of said shorter sides.

Claims26

Dependent claims

A surface emission type semiconductor laser for emitting a beam in a direction perpendicular to a semiconductor substrate in which said laser is formed, comprising:

an optical resonator means including a pair of reflecting mirrors having different reflectivities and a plurality of semiconductor layers between said reflecting mirrors, the semiconductor layers including at least a cladding layer in said semiconductor layers being formed into at least one column-like portion;
a II-VI group compound semiconductor epitaxial layer surrounding said at least one column-like portion;
and
a light emission side electrode being in contact with the surface of said at least one column-like portion and having a light emitting port formed therein at an area opposite to said at least one column-like portion, one of said pairs of reflecting mirrors on the light emitting side being formed at least in said light emitting port.
said at least one column-like portion being of rectangular cross-section in a plane parallel to said semiconductor substrate and having longer and shorter sides, whereby the polarization plane of said emitted laser beam being parallel to the direction of said shorter sides.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application: 08/013,024Filed 2 Feb 1993 · continuation in part
Priority: JP 2-24200012 Sep 1990
Granted: 15 Mar 1994
Term ends: Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10H 20/013
Of bodies, e.g. forming semiconductor layers: having light-emitting regions comprising only Group III-V materials
H01S 5/18338
Having a special structure for lateral current or light confinement: non-circular shape of the structure
H01S 5/18369
Structure of the reflectors, e.g. hybrid mirrors: based on dielectric materials
H01S 5/423
Arrays of surface emitting lasers: having a vertical cavity

Family

Serial756,979Parent of this continuation-in-part · filed 9 Sep 1991
Serial756,980Parent of this continuation-in-part · filed 9 Sep 1991
Serial756,981Parent of this continuation-in-part · filed 9 Sep 1991
Serial997,177Parent of this continuation-in-part · filed 28 Dec 1992
US 5,181,219 AParent of this continuation-in-part
US 5,181,221 AParent of this continuation-in-part
US 5,182,757 AParent of this continuation-in-part
US 5,295,148 AThis patent

From the US filing history. Foreign family members aren’t listed.