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US 5,294,858 AGranted
Surface acoustic wave device
AssigneeSumitomo Electric Industries, Ltd.
InventorsHideaki Nakahata, Akihiro Hachigo, Shinichi Shikata, Naoji Fujimori
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AssigneeSumitomo Electric Industries, Ltd.
InventorsHideaki Nakahata, Akihiro Hachigo, Shinichi Shikata, Naoji Fujimori
Estimating the term…
Disclosed herein is a surface acoustic wave device employing diamond, which has an operation frequency in a range of several hundred MHz to several GHz, a high propagation velocity and a large electromechanical coefficient. This surface acoustic wave comprises a substrate, a diamond layer which is formed on the substrate, a ZnO layer which is formed on the diamond layer, and interdigital electrodes which are formed on the ZnO layer, and utilizes a second order mode of a surface acoustic wave which is excited in a structure satisfying (2.pi..H/.lambda.)=0.9 to 2.3 where H represents the thickness of the ZnO layer and .lambda. represents the wavelength of the surface acoustic wave. This surface acoustic wave device can be used in an extremely high frequency range, whereby the same is applicable to a resonator, a delay line, a signal processing device, a convolver, a correlator or the like in addition to a filter.
A surface acoustic wave device comprising a substrate, a diamond layer being formed on said substrate, a ZnO layer being formed on said diamond layer and interdigital electrodes being formed on said ZnO layer,
A surface acoustic wave device comprising a substrate, a diamond layer being formed on said substrate, interfacial short-circuiting electrodes being formed on said diamond layer, a ZnO layer being formed on said interfacial short-circuiting electrodes and interdigital electrodes being formed on said ZnO layer,
A surface acoustic wave device comprising a substrate, a diamond-like carbon layer being formed on said substrate, a ZnO layer being formed on said diamond-like carbon layer and interdigital electrodes being formed on said ZnO layer,
A surface acoustic wave device comprising a substrate, a diamond-like carbon layer being formed on said substrate, interfacial short-circuiting electrodes being formed on said diamond-like carbon layer, a ZnO layer being formed on said interfacial short-circuiting electrodes and interdigital electrodes being formed on said ZnO layer,
Dependencies are inferred from the claim text.