Crystal growth method of III - V compound semiconductor

Abstract

An epitaxial growth method of a single crystal of III-V compound semiconductor on the surface of a semiconductor substrate by supplying a molecular beam of a group III source material and a molecular beam of a group V source material onto the surface of the substrate in a chamber held in vacuum. With this method, the molecular beams comprises a molecular beam of a first group III source material composed of an organic metal compound of a group III element not having a halogen, a molecular beam of a second group III source material having a halogen chemically bonded to atoms of the group III element, and a molecular beam of a group V source material making a compound semiconductor with the group III element of the first group III material. By setting a substrate temperature at, for example, about 500.degree. C. a single crystal of III-V compound semiconductor can be satisfactorily selectively grown. As the first source material, an organic metal compound of a group III element having an alkyl, for example, trimethyl gallium (TMGa) or triethyl gallium (TEGa) is employed and as the second source material, for example, diethyl gallium chloride (DEGaCl), ethyl gallium di-chloride (EGaDCl) or trichlorogallium (GaCl.sub.a), which has a chlorine, or diethyl gallium bromide (DEGaBr) having a bromine is employed. As the group V source material, for example, As, P or Sb is employed.

Dependencies are inferred from the claim text.